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STP1N120
N-channel 1200V - 30 - 500mA - TO-220 Zener - protected SuperMESHTM Power MOSFET
PRELIMINARY DATA
General features
Type STP1N120

VDSS 1200V
RDS(on) < 38
ID 500mA
PW 45W
100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized
1 3 2
TO-220
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP1N120 Marking P1N120 Package TO-220 Packaging Tube
September 2006
Rev 1
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www.st.com 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
STP1N120
Contents
1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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STP1N120
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM (1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Derating factor Value 1200 30 500 315 2 0.36 45 Tbd -55 to 150 Unit V V mA mA A W/C W V/ns C
PTOT dv/dt (2) Tj Tstg
Total dissipation at TC = 25C Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 1A, di/dt 200A/s, VDD 960
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 2.78 62.5 300 Unit C/W C/W C
Rthj-amb (1) Thermal resistance junction-amb max Tl Maximum lead temperature for soldering purpose
1. When mounted on 1inch FR-4 board, 2 oz Cu
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD= 50V) Max value Tbd Tbd Unit A mJ
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Electrical characteristics
STP1N120
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VGS = 20V VDS= VGS, ID = 50A VGS= 10V, ID= 0.25A 3 3.75 30 Min. 1200 1 50 10 4.5 38 Typ. Max. Unit V A A A V
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 130 22 3 7 Tbd Tbd Max. Unit pF pF pF nC nC nC
VDS =25V, f=1MHz, VGS=0
VDD=960V, ID = 500mA VGS =10V (see Figure 2)
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STP1N120
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Tbd Tbd Tbd Tbd Max. Unit ns ns ns ns
Tbd
Table 7.
Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM
1.
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1A, VGS=0 ISD=1A, VDD=100V di/dt = 50A/s,Tj=25C (see Figure 6) ISD=1A,VDD=100V di/dt=50A/s,Tj=150C (see Figure 6) Tbd Tbd Tbd Tbd Tbd Tbd Test conditions Min Typ. Max 500 2 Tbd Unit mA A V ns nC A ns nC A
Pulsed: pulse duration = 300s, duty cycle 1.5%
Table 8.
Symbol
Gate-source zener diode
Parameter Test conditions Min 30 Typ. Max Unit V
BVGSO (1) Gate-source breakdown voltage Igs 1mA, (open drain)
1. The built-in-back zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possibile voltage transients that may occasionally be applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and osteffective intervention to protect the device's integrity. These integrated zener diodes thus avoid the usage of external components.
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Test circuit
STP1N120
3
Figure 1.
Test circuit
Switching times test circuit for resistive load Figure 2. Gate charge test circuit
Figure 3.
Test circuit for inductive load Figure 4. switching and diode recovery times
Unclamped inductive load test circuit
Figure 5.
Unclamped inductive waveform
Figure 6.
Switching time waveform
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STP1N120
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP1N120
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP1N120
Revision history
5
Revision history
Table 9.
Date 14-Sep-2006
Revision history
Revision 1 First release Changes
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STP1N120
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